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However, the diffraction rings of polycrystalline would appear with the introduction of Se element.


Consequently, we believe the ternary Sn S alloys would prefer to grow and form 2D nanosheets structure.Unlike graphene with zero band gap, metal dichalcogenides 2D layered structures own sizable band gaps and exhibit strong light-matter interaction, which are promising for electronic and optoelectronic devices.It is required to modify pristine materials to promote their physical and chemical properties.Herein we obtained ternary Sn S alloys with tunable chemical compositions and optical properties via a simple one-step solvothermal process.Raman scattering and UV-vis-NIR absorption spectra reveal the composition-related optical features, and the band gaps can be discretely modulated from 2.23 to 1.29e V with the increase of Se content.The change of composition results in the difference of crystal structure as well as morphology for Sn S(2-x)Se(x) solid solution, namely, nanosheets assemblies or nanosheet.

The photoelectrochemical measurements indicate that the performance of ternary Sn S(2-x)Se(x) alloys depends on their band structures and morphology characteristics.

In additional, the crystallite dimensions of all the samples were calculated by Scherrer equation, which were 12.4nm, 9.9nm, 11.5nm, 12.0nm, 7.9nm, and 23.6nm with the increase of Se contents, respectively (Supplementary Table S1). The introduction of Se element would have a large affect on the morphology of the samples.

presented typical nanosheets structure with lateral sizes of ca. Upon Se doping, nanosheets and nanosheet assemblies are formed, the later one of which consists of building block of nanosheets.

The change of composition results in the difference of crystal structure as well as morphology for Sn STwo-dimensional (2D) layered metal dichalcogenides nanomaterials are attracting intense interest due to their fascinating properties and potential applications in optics, optoelectrinics, catalysis, energy conversion and storage, etc.

The dichalcogenides possess individual sandwiched X−M−X layer structure with weak out-of-plane van der Waals forces between molecular layers and strong in-plane chemical bonding within the layers.

Furthermore, Sn S(2-x)Se(x) photodetectors present high photoresponsivity with a maximum of 35 m A W(-1) and good light stability in a wide range of spectral response from ultraviolet to visible light, which renders them promising candidates for a variety of optoelectronic applications.